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K4S281632B-TC10 from SAMSUNG

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K4S281632B-TC10

Manufacturer: SAMSUNG

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Partnumber Manufacturer Quantity Availability
K4S281632B-TC10,K4S281632BTC10 SAMSUNG 6000 In Stock

Description and Introduction

128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL The **K4S281632B-TC10** is a memory chip manufactured by **Samsung**. Below are the factual specifications, descriptions, and features from the available knowledge base:  

### **Specifications:**  
- **Type:** Synchronous DRAM (SDRAM)  
- **Density:** 128Mbit (4M x 32)  
- **Organization:** 4 Banks x 4M words x 32 bits  
- **Voltage:** 3.3V  
- **Speed:** 10ns (100MHz)  
- **Package:** 54-pin TSOP II  
- **Refresh:** 4096 cycles / 64ms  
- **Operating Temperature:** Commercial (0°C to 70°C)  

### **Descriptions & Features:**  
- **High-Speed Operation:** Supports clock frequencies up to 100MHz.  
- **Burst Mode:** Supports sequential and interleaved burst operations.  
- **Auto Refresh & Self Refresh:** Includes both modes for power efficiency.  
- **Low Power Consumption:** Optimized for 3.3V operation.  
- **CAS Latency:** Programmable (2 or 3 cycles).  
- **Single 3.3V Power Supply:** No need for additional voltage inputs.  
- **Fully Synchronous:** All signals are registered on the positive edge of the clock.  

This chip is commonly used in embedded systems, networking equipment, and other applications requiring moderate-speed SDRAM.  

(Note: No additional guidance or suggestions provided as per request.)

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