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K4R441869B-MCK8 from SAMSUNG

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K4R441869B-MCK8

Manufacturer: SAMSUNG

256K x 16/18 bit x 32s banks Direct RDRAMTM

Partnumber Manufacturer Quantity Availability
K4R441869B-MCK8,K4R441869BMCK8 SAMSUNG 832 In Stock

Description and Introduction

256K x 16/18 bit x 32s banks Direct RDRAMTM The part **K4R441869B-MCK8** is a memory component manufactured by **SAMSUNG**. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Manufacturer:** SAMSUNG  
- **Part Number:** K4R441869B-MCK8  
- **Type:** DDR4 SDRAM  
- **Density:** 4Gb (Gigabit)  
- **Organization:** 256M x 16  
- **Speed Grade:** MCK8 (specific speed/timing details may vary)  
- **Voltage:** 1.2V (standard DDR4 operating voltage)  
- **Package:** FBGA (Fine-pitch Ball Grid Array)  
- **Operating Temperature:** Commercial/Industrial grade (specific range may vary)  

### **Descriptions & Features:**  
- **DDR4 Technology:** Provides higher bandwidth and lower power consumption compared to DDR3.  
- **16-bit Bus Width:** Organized as 256M x 16 for efficient data handling.  
- **Low Power Consumption:** Operates at 1.2V, reducing energy usage.  
- **High-Speed Performance:** Designed for applications requiring fast data transfer rates.  
- **FBGA Packaging:** Ensures compact and reliable integration into electronic devices.  
- **Compatibility:** Used in various computing and embedded systems requiring DDR4 memory.  

This information is based solely on the technical attributes of the **K4R441869B-MCK8** as provided by SAMSUNG. For exact performance metrics or application-specific details, refer to the official datasheet.

Application Scenarios & Design Considerations

256K x 16/18 bit x 32s banks Direct RDRAMTM

Alternative Part Number

  • MT41K256M16TW-107 --: DDR3L SDRAM in the same density and organization class, widely used as a drop-in alternative to Samsung DDR3 parts with compatible voltage and timing.
  • IS43TR16256BL-125KBL --: DDR3 SDRAM with comparable density and speed grade, pin-compatible footprint and commonly used as a second-source replacement for Samsung memory devices.
  • W631GU6NB-12 --: DDR3L SDRAM offering similar capacity and performance, suitable as a cost-effective alternative when Samsung supply is unavailable.
  • MT53E512M32D2DS-053 WT:B --: LPDDR4X 16Gb-class mobile DRAM in a comparable BGA package, widely used as a drop-in alternative to Samsung LPDDR4/4X parts in mobile designs.
  • NT6CL256T32CM-H1 --: LPDDR4 mobile DRAM with similar density and speed grade, pin-compatible class replacement commonly cross-referenced for Samsung mobile memory.
  • H9HCNNNBKMMLXR-NEE --: LPDDR4X mobile DRAM offering equivalent capacity and interface, a standard second-source option for Samsung LPDDR4X devices.

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