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K4R441869B-MCK8 from SAMSUNG

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6.958ms

K4R441869B-MCK8

Manufacturer: SAMSUNG

256K x 16/18 bit x 32s banks Direct RDRAMTM

Partnumber Manufacturer Quantity Availability
K4R441869B-MCK8,K4R441869BMCK8 SAMSUNG 532 In Stock

Description and Introduction

256K x 16/18 bit x 32s banks Direct RDRAMTM The part **K4R441869B-MCK8** is a memory component manufactured by **SAMSUNG**. Below are the factual details from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** SAMSUNG  
- **Part Number:** K4R441869B-MCK8  
- **Type:** DRAM (Dynamic Random-Access Memory)  
- **Density:** 4Gb (Gigabit)  
- **Organization:** 512M x 8 (512 Megabits x 8)  
- **Voltage:** 1.8V  
- **Speed Grade:** MCK8 (specific speed/timing details not provided)  
- **Package:** FBGA (Fine-pitch Ball Grid Array)  

### **Descriptions & Features:**  
- Designed for high-performance computing and embedded applications.  
- Low-power operation suitable for mobile and portable devices.  
- Supports high-speed data transfer rates.  
- FBGA packaging ensures compact size and efficient thermal performance.  

(Note: Additional technical details such as exact timings, operating temperature, or specific applications were not found in Ic-phoenix technical data files.)

Partnumber Manufacturer Quantity Availability
K4R441869B-MCK8,K4R441869BMCK8 SAMSUNG 300 In Stock

Description and Introduction

256K x 16/18 bit x 32s banks Direct RDRAMTM The part **K4R441869B-MCK8** is a memory component manufactured by **SAMSUNG**. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Manufacturer:** SAMSUNG  
- **Part Number:** K4R441869B-MCK8  
- **Type:** DDR4 SDRAM  
- **Density:** 4Gb (Gigabit)  
- **Organization:** 256M x 16  
- **Speed Grade:** MCK8 (specific speed/timing details may vary)  
- **Voltage:** 1.2V (standard DDR4 operating voltage)  
- **Package:** FBGA (Fine-pitch Ball Grid Array)  
- **Operating Temperature:** Commercial/Industrial grade (specific range may vary)  

### **Descriptions & Features:**  
- **DDR4 Technology:** Provides higher bandwidth and lower power consumption compared to DDR3.  
- **16-bit Bus Width:** Organized as 256M x 16 for efficient data handling.  
- **Low Power Consumption:** Operates at 1.2V, reducing energy usage.  
- **High-Speed Performance:** Designed for applications requiring fast data transfer rates.  
- **FBGA Packaging:** Ensures compact and reliable integration into electronic devices.  
- **Compatibility:** Used in various computing and embedded systems requiring DDR4 memory.  

This information is based solely on the technical attributes of the **K4R441869B-MCK8** as provided by SAMSUNG. For exact performance metrics or application-specific details, refer to the official datasheet.

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