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K4R271669F from SAM

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K4R271669F

Manufacturer: SAM, SAMSUNG, ICS

128Mbit RDRAM(F-die)
Partnumber Manufacturer Quantity Availability
K4R271669F SAM, SAMSUNG, ICS 430 In Stock

Description and Introduction

128Mbit RDRAM(F-die) The part **K4R271669F** is a memory component manufactured by **SAMSUNG**. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Part Number:** K4R271669F  
- **Manufacturer:** SAMSUNG  
- **Type:** DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory)  
- **Density:** 128Mb (Megabit)  
- **Organization:** 16M x 8 (16 Meg words x 8 bits)  
- **Voltage:** 2.5V ± 0.2V  
- **Speed Grade:** Varies (e.g., 5ns, 6ns, or other speed bins depending on the variant)  
- **Package:** 66-pin TSOP-II (Thin Small Outline Package)  
- **Operating Temperature:** Commercial (0°C to 70°C) or Industrial (-40°C to 85°C) depending on variant  

### **Descriptions:**  
- The **K4R271669F** is a high-speed CMOS DDR SDRAM designed for applications requiring high bandwidth and low power consumption.  
- It is commonly used in embedded systems, networking devices, and consumer electronics.  
- Supports **double data rate** architecture, meaning data is transferred on both the rising and falling edges of the clock signal.  
- Features **auto refresh** and **self-refresh** modes for power-saving operation.  

### **Features:**  
- **2.5V Power Supply:** Ensures lower power consumption compared to older SDRAM technologies.  
- **Burst Length:** Supports programmable burst lengths (2, 4, or 8).  
- **CAS Latency:** Configurable (typically 2 or 2.5).  
- **On-Die Termination (ODT):** Reduces signal reflection and improves signal integrity.  
- **Differential Clock Inputs (CK & /CK):** Enhances noise immunity.  
- **Bi-Directional Data Strobe (DQS):** Ensures accurate data capture.  

This information is based on standard specifications for the **K4R271669F** from SAMSUNG. For exact details, refer to the official datasheet.

Application Scenarios & Design Considerations

128Mbit RDRAM(F-die)

Alternative Part Number

  • MT48LC16M16A2P-6A --: 16M x 16 SDRAM in TSOP-54 package with comparable speed grade, widely available and pin-compatible with the original Samsung SDRAM.
  • IS42S16160D-7TL --: 16M x 16 SDRAM offering similar density, organization and interface, commonly used as a drop-in replacement for Samsung SDRAM parts.
  • W9825G6KH-6 --: 16M x 16 SDRAM with matching voltage and timing characteristics, a cost-effective alternative for the original Samsung device.
  • MT41K256M16TW-107 --: DDR3L SDRAM in the same density class with comparable speed grade, widely available and pin-compatible in most designs.
  • IS43TR16256A-125KBL --: DDR3 SDRAM alternative with similar organization and speed, often used as a drop-in replacement for Samsung DDR3 parts.
  • W631GU6NB-12 --: DDR3L SDRAM offering comparable capacity and performance, suitable as a cost-effective second source.
  • IS42S16160J-7BLI --: 16M x16 SDRAM in the same density class, widely available and pin-compatible with common SDRAM layouts, making it a strong drop-in candidate.
  • MT48LC16M16A2P-7E --: Industry-standard 16M x16 SDRAM with matching organization and speed grade, well documented and broadly sourced as a replacement.

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