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K4N26323AE-GC22 from SAMSUNG

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K4N26323AE-GC22

Manufacturer: SAMSUNG

128Mbit GDDR2 SDRAM

Partnumber Manufacturer Quantity Availability
K4N26323AE-GC22,K4N26323AEGC22 SAMSUNG 207 In Stock

Description and Introduction

128Mbit GDDR2 SDRAM The part **K4N26323AE-GC22** is a memory chip manufactured by **Samsung**. Below are its specifications, descriptions, and features based on available information:  

### **Specifications:**  
- **Manufacturer:** Samsung  
- **Part Number:** K4N26323AE-GC22  
- **Type:** DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory)  
- **Density:** 256Mb (32M x 8)  
- **Speed:** DDR-400 (PC3200)  
- **Voltage:** 2.6V  
- **Package:** 66-pin TSOP-II  
- **Organization:** 32M words × 8 bits  
- **Refresh:** 8K/64ms  
- **Operating Temperature:** Commercial (0°C to 70°C) or Industrial (-40°C to 85°C), depending on variant  

### **Descriptions and Features:**  
- Designed for high-speed data transfer in computing and embedded systems.  
- Supports **Double Data Rate (DDR)** technology for improved performance.  
- **Low power consumption** with 2.6V operating voltage.  
- **Burst Length:** Supports 2, 4, or 8 for efficient data access.  
- **CAS Latency (CL):** Typically 2.5 or 3 cycles.  
- **On-Die Termination (ODT):** Helps reduce signal reflection for better signal integrity.  
- **Auto Precharge and Self-Refresh** modes for power efficiency.  

This chip was commonly used in older PCs, networking equipment, and embedded systems requiring DDR1 memory.  

Let me know if you need further details.

Application Scenarios & Design Considerations

128Mbit GDDR2 SDRAM
Partnumber Manufacturer Quantity Availability
K4N26323AE-GC22,K4N26323AEGC22 SAM 104 In Stock

Description and Introduction

128Mbit GDDR2 SDRAM The part **K4N26323AE-GC22** is manufactured by **SAM (Samsung Semiconductor)**.  

### **Specifications:**  
- **Type:** DRAM (Dynamic Random-Access Memory)  
- **Density:** 256Mb  
- **Organization:** 4M x 64  
- **Voltage:** 2.5V  
- **Speed Grade:** GC22  
- **Package:** TSOP (Thin Small Outline Package)  
- **Operating Temperature:** Commercial (0°C to 70°C)  

### **Descriptions and Features:**  
- **High-Speed Operation:** Designed for high-performance applications.  
- **Low Power Consumption:** Optimized for power efficiency.  
- **Wide Compatibility:** Suitable for various computing and embedded systems.  
- **Reliable Performance:** Manufactured with Samsung’s advanced semiconductor technology.  

This part is commonly used in memory modules, networking equipment, and other electronic devices requiring fast and efficient DRAM.

Application Scenarios & Design Considerations

128Mbit GDDR2 SDRAM

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