1Gb D-die DDR3 SDRAM Specification The **K4B1G1646D-HCF7** is a DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip manufactured by **Samsung**. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Memory Type:** DDR3 SDRAM
- **Density:** 1Gb (Gigabit)
- **Organization:** 128M x 8 (128 Meg words × 8 bits)
- **Speed Grade:** **HCF7** (operating frequency and timing depend on this grade)
- **Voltage:** **1.5V** (standard DDR3 operating voltage)
- **Package:** **FBGA (Fine-pitch Ball Grid Array)**
- **Data Rate:** Up to **1600 Mbps** (depending on speed bin)
- **Burst Length:** 8 (BL8) or **Burst Chop 4 (BC4)**
- **CAS Latency (CL):** Typically **11 cycles** (varies based on speed grade)
- **Refresh Mode:** **Auto Refresh & Self Refresh**
- **Operating Temperature Range:** Commercial (0°C to 85°C) or Industrial (-40°C to 85°C) depending on variant
### **Descriptions & Features:**
- **High Performance:** Designed for **low power consumption** and **high-speed data transfer** in computing and embedded systems.
- **On-Die Termination (ODT):** Reduces signal reflections for improved signal integrity.
- **Programmable CAS Latency (CL):** Supports multiple latency settings for flexibility.
- **Pre-fetch Architecture:** **8n pre-fetch** for efficient data handling.
- **Bi-Directional Differential Data Strobe (DQS):** Ensures accurate data capture.
- **Low Power Features:** Supports **Partial Array Self Refresh (PASR)** and **Temperature-Compensated Self Refresh (TCSR)**.
- **RoHS Compliant:** Environmentally friendly manufacturing.
This chip is commonly used in **PCs, servers, networking equipment, and embedded systems** requiring **high-speed, low-power DDR3 memory**.
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