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K4B1G0446D-HCF8 from SAMSUNG

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15.137ms

K4B1G0446D-HCF8

Manufacturer: SAMSUNG

1Gb D-die DDR3 SDRAM Specification

Partnumber Manufacturer Quantity Availability
K4B1G0446D-HCF8,K4B1G0446DHCF8 SAMSUNG 985 In Stock

Description and Introduction

1Gb D-die DDR3 SDRAM Specification **Part Number:** K4B1G0446D-HCF8  
**Manufacturer:** SAMSUNG  

### **Specifications:**  
- **Type:** DDR3 SDRAM (Synchronous DRAM)  
- **Density:** 1Gb (Gigabit)  
- **Organization:** 128M x 8 (1Gbit)  
- **Voltage:** 1.5V ±0.075V  
- **Speed:** 800MHz (DDR3-800)  
- **Data Rate:** 1600Mbps/pin  
- **Package:** FBGA (Fine-Pitch Ball Grid Array)  
- **Operating Temperature:** Commercial (0°C to 85°C)  
- **Refresh:** 8K Refresh Cycle (64ms)  
- **Burst Length:** 8 (BL8) or On-the-fly (4 or 8)  
- **CAS Latency (CL):** 6, 5 (programmable)  

### **Descriptions & Features:**  
- **Low Power Consumption:** Optimized for energy efficiency.  
- **On-Die Termination (ODT):** Supports improved signal integrity.  
- **Auto Precharge & Self-Refresh:** Enhances performance and power management.  
- **Programmable CAS Latency:** Flexible timing configurations.  
- **RoHS Compliant:** Environmentally friendly manufacturing.  
- **High-Speed Interface:** Supports DDR3-800 speed grade.  

This DRAM is commonly used in computing, networking, and embedded applications requiring reliable, high-speed memory.

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