IC Phoenix logo

Home ›  J  › J1 > JDV2S01E

JDV2S01E from TOSHIBA

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

JDV2S01E

Manufacturer: TOSHIBA

Diode Silicon Epitaxial Planar Type VCO for UHF band

Partnumber Manufacturer Quantity Availability
JDV2S01E TOSHIBA 95500 In Stock

Description and Introduction

Diode Silicon Epitaxial Planar Type VCO for UHF band The part **JDV2S01E** is manufactured by **TOSHIBA**.  

### **Specifications:**  
- **Type:** IGBT (Insulated Gate Bipolar Transistor) module  
- **Voltage Rating:** 600V  
- **Current Rating:** 2A  
- **Package:** TO-220AB (through-hole mounting)  
- **Configuration:** Single IGBT with built-in freewheeling diode  

### **Descriptions & Features:**  
- Designed for high-efficiency switching applications  
- Low saturation voltage for reduced power loss  
- Fast switching speed  
- Built-in diode for inductive load protection  
- Suitable for motor control, power supplies, and inverters  
- Compliant with industry-standard reliability and safety requirements  

For detailed electrical characteristics and application notes, refer to the official **TOSHIBA datasheet**.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips