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JDP2S05CT from TOSHIBA

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15.625ms

JDP2S05CT

Manufacturer: TOSHIBA

UHF~VHF Band RF Switch Applications

Partnumber Manufacturer Quantity Availability
JDP2S05CT TOSHIBA 90000 In Stock

Description and Introduction

UHF~VHF Band RF Switch Applications The part **JDP2S05CT** is a **Dual P-Channel MOSFET** manufactured by **TOSHIBA**. Below are its specifications, descriptions, and features based on available data:  

### **Specifications:**  
- **Type:** Dual P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGSS):** ±20V  
- **Drain Current (ID):** -5.0A (per channel)  
- **Power Dissipation (PD):** 2.0W (per channel)  
- **On-Resistance (RDS(ON)):**  
  - 50mΩ (max) at VGS = -10V  
  - 70mΩ (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -1.0V to -2.5V  
- **Package:** SOP-8 (Small Outline Package)  

### **Descriptions:**  
- Designed for **power management** applications.  
- Suitable for **load switching, power distribution, and DC-DC conversion**.  
- Features **low on-resistance** for improved efficiency.  

### **Features:**  
- **Dual P-Channel MOSFET** in a single package.  
- **Low gate charge** for fast switching.  
- **Low leakage current** for power-saving applications.  
- **Lead-free and RoHS compliant**.  

For detailed electrical characteristics and application circuits, refer to the official **TOSHIBA datasheet**.

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