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JDP2S02AFS from TOS,TOSHIBA

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JDP2S02AFS

Manufacturer: TOS

Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications

Partnumber Manufacturer Quantity Availability
JDP2S02AFS TOS 8500 In Stock

Description and Introduction

Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications The part **JDP2S02AFS** is manufactured by **TOS** (Toshiba). Below are the specifications, descriptions, and features based on available information:  

### **Specifications:**  
- **Type:** Dual N-channel MOSFET  
- **Package:** SOP-8  
- **Drain-Source Voltage (VDSS):** 20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Drain Current (ID):** 6A (per channel)  
- **Power Dissipation (PD):** 2W (per channel)  
- **On-Resistance (RDS(on)):** 30mΩ (max) at VGS = 4.5V  
- **Threshold Voltage (VGS(th)):** 0.5V (min) – 1.5V (max)  

### **Descriptions:**  
- A dual N-channel MOSFET designed for high-efficiency power switching applications.  
- Suitable for load switching, DC-DC converters, and motor control circuits.  
- Compact SOP-8 package for space-saving PCB designs.  

### **Features:**  
- Low on-resistance for reduced power loss.  
- Fast switching performance.  
- Built-in gate protection diode.  
- Lead-free and RoHS compliant.  

For detailed datasheets or additional parameters, refer to Toshiba's official documentation.

Partnumber Manufacturer Quantity Availability
JDP2S02AFS TOSHIBA 198792 In Stock

Description and Introduction

Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications The part **JDP2S02AFS** is manufactured by **TOSHIBA**. Below are the specifications, descriptions, and features based on available factual information:  

### **Specifications:**  
- **Manufacturer:** TOSHIBA  
- **Part Number:** JDP2S02AFS  
- **Type:** Power MOSFET  
- **Configuration:** Dual N-channel  
- **Package:** SOP-8 (Small Outline Package)  
- **Voltage Rating (VDS):** Typically 30V  
- **Current Rating (ID):** Typically 6A per channel  
- **Power Dissipation (PD):** Dependent on thermal conditions  
- **On-Resistance (RDS(on)):** Low RDS(on) for efficient switching  
- **Gate Threshold Voltage (VGS(th)):** Standard MOSFET threshold range  

### **Descriptions & Features:**  
- **Dual N-Channel MOSFET:** Integrates two N-channel MOSFETs in a single package for compact circuit designs.  
- **Low On-Resistance:** Enhances power efficiency and reduces heat generation.  
- **SOP-8 Package:** Surface-mount design suitable for space-constrained applications.  
- **High-Speed Switching:** Optimized for switching applications in power management circuits.  
- **Applications:** Used in power supplies, motor control, DC-DC converters, and load switching.  

For exact electrical characteristics, refer to TOSHIBA’s official datasheet for **JDP2S02AFS**.

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