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JANTXV2N3501L from NES

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JANTXV2N3501L

Manufacturer: NES

NPN SILICON TRANSISTOR

Partnumber Manufacturer Quantity Availability
JANTXV2N3501L NES 121 In Stock

Description and Introduction

NPN SILICON TRANSISTOR The JANTXV2N3501L is a high-reliability, military-grade N-channel junction field-effect transistor (JFET) manufactured by NES (National Electronics Supply).  

### **Specifications:**  
- **Type:** N-channel JFET  
- **Maximum Drain-Source Voltage (VDS):** 40V  
- **Maximum Gate-Source Voltage (VGS):** 40V  
- **Maximum Drain Current (ID):** 30mA  
- **Power Dissipation (PD):** 300mW  
- **Operating Temperature Range:** -65°C to +200°C  
- **Junction Temperature (TJ):** +200°C  
- **Low Noise Figure**  
- **High Input Impedance**  
- **Hermetically Sealed Package**  

### **Descriptions and Features:**  
- Designed for high-reliability military and aerospace applications.  
- Meets MIL-PRF-19500/522 qualification standards.  
- Hermetic packaging ensures durability in harsh environments.  
- Suitable for low-noise amplification, switching, and analog signal processing.  
- Features excellent thermal stability and performance consistency.  

This device is commonly used in critical applications where reliability and performance under extreme conditions are required.

Application Scenarios & Design Considerations

NPN SILICON TRANSISTOR

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