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JANTX2N6845 from SI/VISHAY

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JANTX2N6845

Manufacturer: SI/VISHAY

-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package

Partnumber Manufacturer Quantity Availability
JANTX2N6845 SI/VISHAY 1 In Stock

Description and Introduction

-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package The JANTX2N6845 is a high-reliability, military-grade N-channel JFET (Junction Field-Effect Transistor) manufactured by SI/VISHAY.  

### **Specifications:**  
- **Type:** N-Channel JFET  
- **Maximum Drain-Source Voltage (VDSS):** 40V  
- **Maximum Gate-Source Voltage (VGS):** 40V  
- **Maximum Continuous Drain Current (ID):** 30mA  
- **Power Dissipation (PD):** 350mW  
- **Operating Temperature Range:** -55°C to +125°C  
- **Gate-Source Cutoff Voltage (VGS(off)):** -0.5V to -4.0V  
- **Zero-Gate-Voltage Drain Current (IDSS):** 1mA to 5mA  
- **Forward Transfer Admittance (Yfs):** 3000µS (min)  
- **Noise Figure (NF):** 1.5dB (typical)  

### **Descriptions and Features:**  
- Designed for high-reliability military and aerospace applications.  
- Low noise performance suitable for RF and analog signal processing.  
- Hermetically sealed metal can package for enhanced durability.  
- Meets JANTX qualification standards for stringent military requirements.  
- Suitable for amplifier, switching, and impedance conversion applications.  

This transistor is part of the JANTX series, ensuring high performance and reliability under extreme conditions.

Partnumber Manufacturer Quantity Availability
JANTX2N6845 IR 159 In Stock

Description and Introduction

-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package The JANTX2N6845 is a high-reliability, military-grade N-channel silicon junction field-effect transistor (JFET) manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Type:** N-channel JFET (Junction Field-Effect Transistor)  
- **Maximum Drain-Source Voltage (VDSS):** 40V  
- **Maximum Gate-Source Voltage (VGS):** 40V  
- **Maximum Continuous Drain Current (ID):** 50mA  
- **Maximum Power Dissipation (PD):** 350mW  
- **Gate-Source Cutoff Voltage (VGS(off)):** -0.5V to -4.0V  
- **Drain-Source On-Resistance (RDS(on)):** Typically 30Ω (varies with bias conditions)  
- **Input Capacitance (Ciss):** Typically 5pF  
- **Reverse Transfer Capacitance (Crss):** Typically 1.5pF  
- **Operating Temperature Range:** -55°C to +125°C  

### **Descriptions & Features:**  
- **Military-Grade Reliability:** JANTX prefix indicates compliance with MIL-PRF-19500 standards for high-reliability applications.  
- **Low Noise:** Suitable for high-impedance, low-noise amplifier circuits.  
- **High Input Impedance:** Ideal for buffer and switching applications.  
- **Hermetically Sealed Package:** Available in TO-72 metal can packaging for rugged performance.  
- **Radiation Hardened:** Designed for use in harsh environments, including aerospace and defense applications.  
- **Matched Pairs Available:** Some versions may be available as matched pairs for differential amplifier circuits.  

This transistor is commonly used in precision analog circuits, RF amplifiers, and switching applications where high reliability is critical.  

(Note: Always refer to the latest datasheet for exact specifications.)

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