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JANTX1N5807US from MICROSEM

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JANTX1N5807US

Manufacturer: MICROSEM

HIGH EFFICIENTCY AXIAL LEAD RECTIFIERS

Partnumber Manufacturer Quantity Availability
JANTX1N5807US MICROSEM 850 In Stock

Description and Introduction

HIGH EFFICIENTCY AXIAL LEAD RECTIFIERS The JANTX1N5807US is a high-reliability, military-grade Schottky barrier diode manufactured by MICROSEMI (now part of Microchip Technology).  

### **Specifications:**  
- **Type:** Schottky Barrier Diode  
- **Maximum Average Forward Current (IF(AV)):** 1A  
- **Peak Forward Surge Current (IFSM)):** 30A (non-repetitive)  
- **Maximum Reverse Voltage (VRRM)):** 20V  
- **Forward Voltage Drop (VF)):** 0.5V (typical at 1A)  
- **Reverse Leakage Current (IR)):** 0.5mA (maximum at rated voltage)  
- **Operating Temperature Range:** -65°C to +175°C  
- **Junction Temperature (TJ)):** +175°C  
- **Package:** DO-41 (Axial Lead)  

### **Descriptions and Features:**  
- Designed for high-reliability military and aerospace applications.  
- Low forward voltage drop for improved efficiency.  
- Fast switching capability with minimal reverse recovery time.  
- Hermetically sealed package for harsh environments.  
- Qualified to MIL-PRF-19500 standards.  
- Radiation-hardened options available (specific variants).  

This diode is commonly used in power rectification, switching circuits, and reverse polarity protection in demanding applications.

Partnumber Manufacturer Quantity Availability
JANTX1N5807US MICROSEMI 850 In Stock

Description and Introduction

HIGH EFFICIENTCY AXIAL LEAD RECTIFIERS The JANTX1N5807US is a high-reliability, military-grade Schottky barrier diode manufactured by MICROSEMI.  

### **Specifications:**  
- **Type:** Schottky Barrier Diode  
- **Maximum Average Forward Current (IF(AV)):** 1A  
- **Peak Forward Surge Current (IFSM):** 30A (non-repetitive)  
- **Reverse Voltage (VR):** 20V  
- **Forward Voltage Drop (VF):** 0.5V (typical at 1A)  
- **Maximum Reverse Leakage Current (IR):** 0.5mA (at 20V)  
- **Operating Temperature Range:** -65°C to +175°C  
- **Junction Temperature (TJ):** 175°C  
- **Package:** DO-35 (Axial Lead)  
- **Qualification:** JANTX (MIL-PRF-19500 qualified)  

### **Descriptions and Features:**  
- Designed for high-reliability military and aerospace applications.  
- Low forward voltage drop for improved efficiency.  
- Fast switching capability due to Schottky barrier construction.  
- Hermetically sealed package for rugged environments.  
- Radiation-hardened options available.  
- Suitable for power rectification, clamping, and switching applications.  

This diode is compliant with military standards, ensuring reliability in harsh conditions.

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