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IDT71V67803S133BQG from IDT

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IDT71V67803S133BQG

Manufacturer: IDT

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Partnumber Manufacturer Quantity Availability
IDT71V67803S133BQG IDT 99 In Stock

Description and Introduction

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect The **IDT71V67803S133BQG** is a high-performance synchronous SRAM manufactured by **Integrated Device Technology (IDT)**. Below are the key specifications, descriptions, and features based on factual data:

### **Specifications:**
- **Memory Type:** Synchronous SRAM (Static Random Access Memory)  
- **Density:** 8Mbit (512K x 18)  
- **Speed:** 133 MHz  
- **Supply Voltage:** 3.3V  
- **Organization:** 512K words × 18 bits  
- **Package Type:** 100-LQFP (14x20mm)  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **Access Time:** 3.0 ns (clock-to-data)  
- **I/O Type:** LVTTL-compatible  

### **Descriptions:**
- The **IDT71V67803S133BQG** is a **flow-through synchronous SRAM** designed for high-speed applications requiring fast access times.  
- It supports **burst mode operations** for efficient data transfer.  
- The device is optimized for **low-power operation** while maintaining high performance.  

### **Features:**
- **Synchronous Operation:** Clock-controlled read/write operations.  
- **Burst Mode Support:** Linear or interleaved burst sequences.  
- **Single 3.3V Power Supply:** Low-voltage operation.  
- **Byte Write Control:** Individual byte write enable signals.  
- **Self-Timed Write Cycle:** Simplifies timing requirements.  
- **JTAG Boundary Scan:** Supports IEEE 1149.1-compliant testing.  
- **Pb-Free & RoHS Compliant:** Environmentally friendly packaging.  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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