256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs The IDT71V65603S150BG is a high-speed 3.3V CMOS synchronous SRAM manufactured by Integrated Device Technology (IDT). Below are the specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Memory Type:** Synchronous SRAM
- **Density:** 64K x 36 (2.25Mb)
- **Organization:** 65,536 words × 36 bits
- **Voltage Supply:** 3.3V ±10%
- **Speed:** 150 MHz (6.6 ns access time)
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Package:** 119-ball BGA (Ball Grid Array)
- **I/O Type:** Common I/O (CIO)
- **Cycle Time:** 6.6 ns (150 MHz operation)
- **Data Retention:** Supported via battery backup (optional)
### **Descriptions:**
- The IDT71V65603S150BG is a synchronous pipelined SRAM designed for high-performance applications requiring fast data access.
- It features a fully synchronous operation, including address, data, and control signals.
- The device supports burst mode operations for sequential data access.
- It is commonly used in networking, telecommunications, and high-speed computing systems.
### **Features:**
- **Synchronous Operation:** All signals are registered on the rising edge of the clock.
- **Pipelined Output:** Enables high-speed data throughput.
- **Burst Mode Support:** Linear or interleaved burst sequences.
- **Common I/O (CIO) Interface:** Simplifies system design.
- **Single 3.3V Power Supply:** Low power consumption.
- **JTAG Boundary Scan:** Supports IEEE 1149.1 for testability.
- **Byte Write Control:** Individual byte write enable signals.
- **ZZ (Sleep) Mode:** Reduces power consumption in standby mode.
This information is based on the manufacturer's datasheet and product documentation. For detailed electrical characteristics and timing diagrams, refer to the official IDT datasheet.
