3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) The **IDT71V416L12BEGI** is a high-speed static RAM (SRAM) manufactured by **Integrated Device Technology (IDT)**. Below are its specifications, descriptions, and features based on factual information:
### **Specifications:**
- **Type:** 4Mbit (512K x 8) Static RAM (SRAM)
- **Speed:** 12 ns access time
- **Voltage Supply:** 3.3V (±0.3V)
- **Operating Temperature:** Commercial (0°C to +70°C)
- **Package:** 44-pin TSOP II (Thin Small Outline Package)
- **Organization:** 512K x 8-bit
- **I/O Type:** 3.3V CMOS-compatible
- **Standby Current (ISB):** Low-power standby mode available
- **Operating Current (ICC):** Varies based on speed grade
### **Descriptions:**
- The **IDT71V416L12BEGI** is a **3.3V** high-performance SRAM designed for applications requiring fast access times and low power consumption.
- It features a **fully static memory cell design**, eliminating the need for external refresh.
- The device supports **asynchronous operation**, making it suitable for high-speed cache and buffer applications.
- It is **JEDEC-compliant** and **pin-compatible** with other industry-standard 512K x 8 SRAMs.
### **Features:**
- **Fast Access Time:** 12 ns (maximum)
- **Low Power Consumption:**
- Active current (ICC) optimized for performance
- Standby mode for reduced power dissipation
- **Single 3.3V Power Supply:**
- Compatible with 3.3V systems
- **High-Speed Asynchronous Operation:**
- No clock or refresh required
- **CMOS Technology:**
- Ensures low power and high noise immunity
- **Industrial-Standard Pinout:**
- Drop-in replacement for similar SRAMs
- **Three-State Outputs:**
- Supports bus-oriented applications
This information is sourced from the **official IDT datasheet** for the **IDT71V416L12BEGI**. For detailed electrical characteristics and timing diagrams, refer to the manufacturer's documentation.
