128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect The IDT71V3578 is a high-speed 3.3V Static RAM (SRAM) manufactured by Integrated Device Technology (IDT). Below are the factual specifications, descriptions, and features of the part:
### **Specifications:**
- **Density:** 512K x 36 (18 Mbit)
- **Organization:** 512K words × 36 bits
- **Supply Voltage:** 3.3V ±10%
- **Access Time:** 3.5 ns, 4 ns, 5 ns, 6 ns, 8 ns, 10 ns (varies by speed grade)
- **Operating Current:** 420 mA (typical at maximum frequency)
- **Standby Current:** 5 mA (typical in CMOS standby mode)
- **Package Options:** 100-pin TQFP (14mm x 20mm), 119-pin BGA
- **Operating Temperature Range:** Commercial (0°C to +70°C) and Industrial (-40°C to +85°C)
### **Descriptions:**
- The IDT71V3578 is a synchronous SRAM designed for high-performance applications requiring fast access times and low power consumption.
- It supports burst mode operation for efficient data transfer in microprocessor and DSP systems.
- The device features a pipelined architecture for high-speed data throughput.
### **Features:**
- **Synchronous Operation:** Clock-controlled read and write operations.
- **Burst Mode Support:** Linear or interleaved burst sequences (configurable).
- **Byte Write Control:** Individual byte write enables (BW1-BW4) for selective writes.
- **Self-Timed Write Cycle:** Simplifies timing requirements.
- **Single 3.3V Power Supply:** Compatible with low-voltage systems.
- **JTAG Boundary Scan:** Supports IEEE 1149.1 for testability.
- **Low Power Modes:** CMOS standby mode reduces power consumption when inactive.
This information is based on the official IDT datasheet for the IDT71V3578 SRAM.
