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IDT71V35761S200BG from IDT

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15.625ms

IDT71V35761S200BG

Manufacturer: IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Partnumber Manufacturer Quantity Availability
IDT71V35761S200BG IDT 168 In Stock

Description and Introduction

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect The IDT71V35761S200BG is a high-speed synchronous SRAM manufactured by Integrated Device Technology (IDT). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Integrated Device Technology (IDT)  

### **Part Number:**  
IDT71V35761S200BG  

### **Specifications:**  
- **Type:** Synchronous SRAM (Static Random-Access Memory)  
- **Density:** 4Mbit (256K x 18)  
- **Speed:** 200 MHz (5 ns access time)  
- **Voltage Supply:** 3.3V  
- **Organization:** 256K words × 18 bits  
- **Interface:** Synchronous (pipelined or flow-through output options)  
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Package:** 119-ball BGA (Ball Grid Array)  

### **Descriptions:**  
- Designed for high-performance applications requiring fast data access.  
- Supports burst mode operation for efficient data transfers.  
- Features a common I/O architecture for simplified system design.  

### **Features:**  
- **High-Speed Operation:** 200 MHz clock frequency.  
- **Low Latency:** 5 ns access time.  
- **Burst Modes:** Supports linear or interleaved burst sequences.  
- **Self-Timed Write Cycle:** Simplifies timing control.  
- **Single 3.3V Power Supply:** Low power consumption.  
- **JTAG Boundary Scan:** Supports IEEE 1149.1 for testability.  
- **Pipelined and Flow-Through Output Options:** Flexibility in system design.  

This information is based on the manufacturer's datasheet and technical documentation. For detailed electrical characteristics and timing diagrams, refer to the official IDT datasheet.

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