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IDT71V35761S166BG from IDT

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15.625ms

IDT71V35761S166BG

Manufacturer: IDT

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Partnumber Manufacturer Quantity Availability
IDT71V35761S166BG IDT 355 In Stock

Description and Introduction

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect The **IDT71V35761S166BG** is a high-speed synchronous SRAM manufactured by **Integrated Device Technology (IDT)**. Below are its key specifications, descriptions, and features:  

### **Manufacturer:**  
- **IDT (Integrated Device Technology)**  

### **Specifications:**  
- **Type:** Synchronous SRAM (Static Random Access Memory)  
- **Density:** 4Mbit (256K x 16)  
- **Speed:** 166 MHz  
- **Voltage Supply:** 3.3V  
- **Organization:** 256K words × 16 bits  
- **Access Time:** 6 ns  
- **Package:** 119-ball BGA (Ball Grid Array)  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  

### **Descriptions:**  
- Designed for high-performance applications requiring fast data access.  
- Features a synchronous interface for improved system timing.  
- Supports burst mode operations for efficient data transfer.  

### **Features:**  
- **Synchronous Operation:** Clock-controlled read/write operations.  
- **Burst Mode Support:** Linear or interleaved burst sequences.  
- **Single 3.3V Power Supply:** Low-power CMOS technology.  
- **Byte Write Control:** Individual byte write enable signals.  
- **Self-Timed Write Cycle:** Simplifies timing requirements.  
- **JTAG Boundary Scan:** Supports IEEE 1149.1-compliant testability.  

This SRAM is commonly used in networking, telecommunications, and high-speed computing applications.

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