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IDT71V2576S-150PFI from IDT

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IDT71V2576S-150PFI

Manufacturer: IDT

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Partnumber Manufacturer Quantity Availability
IDT71V2576S-150PFI,IDT71V2576S150PFI IDT 126 In Stock

Description and Introduction

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect The **IDT71V2576S-150PFI** is a high-speed 256K x 16 (4-Mbit) synchronous SRAM manufactured by **Integrated Device Technology (IDT)**. Below are its specifications, descriptions, and features:

### **Specifications:**
- **Density:** 4 Mbit (256K x 16)  
- **Organization:** 262,144 words × 16 bits  
- **Supply Voltage:** 3.3V (±10%)  
- **Speed:** 150 MHz (6.6 ns access time)  
- **Package:** 100-pin TQFP (PFI)  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **I/O Type:** Synchronous, 3.3V LVTTL-compatible  

### **Descriptions:**
- The **IDT71V2576S-150PFI** is a **pipelined synchronous SRAM** designed for high-performance applications requiring fast data access.  
- It features a **burst counter** for linear or interleaved burst sequences.  
- Supports **single-cycle deselect** for improved system efficiency.  
- Includes **ZZ (sleep mode)** for power-saving operation.  

### **Features:**
- **Synchronous Operation:** Clock-controlled read/write cycles.  
- **Burst Mode Support:** Linear or interleaved burst sequences (1, 2, 4, 8, or full-page).  
- **Single 3.3V Power Supply:** Low-power CMOS technology.  
- **Byte Write Control:** Individual byte write enables (BW1, BW2, BW3, BW4).  
- **Self-Timed Write Cycle:** Simplified timing requirements.  
- **JTAG Boundary Scan (IEEE 1149.1 compliant):** Supports testability.  
- **Low Standby Power (ZZ Mode):** Reduces power consumption when inactive.  
- **Pb-Free & RoHS Compliant:** Environmentally friendly packaging.  

This SRAM is commonly used in networking, telecommunications, and high-speed computing applications.

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