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IDT71P72804S250BQ from IDT

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IDT71P72804S250BQ

Manufacturer: IDT

18Mb Pipelined QDRII SRAM Burst of 2

Partnumber Manufacturer Quantity Availability
IDT71P72804S250BQ IDT 12 In Stock

Description and Introduction

18Mb Pipelined QDRII SRAM Burst of 2 The **IDT71P72804S250BQ** is a high-performance, low-power SRAM device manufactured by **Integrated Device Technology (IDT)**. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Memory Type:** Synchronous Pipelined SRAM  
- **Density:** 8 Mbit (512K x 16)  
- **Speed:** 250 MHz  
- **Voltage Supply:** 3.3V  
- **Access Time:** 3.6 ns  
- **Package:** 119-ball BGA (Ball Grid Array)  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  

### **Descriptions:**
- Designed for high-speed networking and telecommunications applications.  
- Supports synchronous read and write operations with pipelined output.  
- Features a common I/O architecture for efficient data transfer.  

### **Features:**
- **Low Power Consumption:** Optimized for power-sensitive applications.  
- **Flow-Through or Pipelined Operation:** Configurable for performance needs.  
- **Byte Write Control:** Allows individual byte writes.  
- **JTAG Boundary Scan:** Supports IEEE 1149.1 for testing.  
- **Self-Timed Write Cycle:** Simplifies timing control.  
- **3.3V I/O Compatibility:** Ensures easy integration with other components.  

This SRAM is commonly used in routers, switches, and high-performance embedded systems requiring fast data access.

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