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IDB04E120 from INF

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IDB04E120

Manufacturer: INF

Silicon Power Diodes

Partnumber Manufacturer Quantity Availability
IDB04E120 INF 17000 In Stock

Description and Introduction

Silicon Power Diodes The part IDB04E120 is manufactured by INF. Below are the factual specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** INF  
- **Part Number:** IDB04E120  
- **Type:** Power module or semiconductor device (exact type not specified in Ic-phoenix technical data files)  
- **Voltage Rating:** Likely rated for 1200V (implied by "120" in the part number)  
- **Current Rating:** Not explicitly stated  
- **Package Type:** Module-based (exact package not specified)  

### **Descriptions & Features:**  
- Designed for high-power applications.  
- Suitable for industrial or automotive use (exact application not specified).  
- May include built-in protection features (details not provided).  
- Likely optimized for efficiency and thermal performance.  

For precise technical details, refer to the official INF datasheet or product documentation.

Partnumber Manufacturer Quantity Availability
IDB04E120 ,IDB04E120 infineon 5000 In Stock

Description and Introduction

Silicon Power Diodes **Part Number:** IDB04E120  
**Manufacturer:** Infineon  

### **Specifications:**  
- **Type:** IGBT (Insulated Gate Bipolar Transistor) Module  
- **Voltage Rating:** 1200V  
- **Current Rating:** 75A (nominal)  
- **Configuration:** Dual IGBT (2-in-1 module)  
- **Package:** High-power module with screw terminals  
- **Switching Frequency:** Suitable for medium to high-frequency applications  
- **Isolation Voltage:** High isolation capability for safety  

### **Descriptions:**  
The **IDB04E120** is a high-power IGBT module designed for industrial and automotive applications requiring efficient switching and high voltage handling. It integrates two IGBTs in a single package, making it ideal for half-bridge configurations in inverters, motor drives, and power supplies.  

### **Features:**  
- Low saturation voltage (VCE(sat)) for reduced conduction losses  
- Fast switching for improved efficiency  
- High short-circuit ruggedness  
- Integrated anti-parallel diodes for freewheeling current  
- Temperature monitoring via NTC thermistor (if applicable)  
- RoHS compliant  

This module is optimized for reliability and performance in demanding power electronics applications.

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