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IDB04E120 from INF

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IDB04E120

Manufacturer: INF, infineon

Silicon Power Diodes

Partnumber Manufacturer Quantity Availability
IDB04E120 INF, infineon 22000 In Stock

Description and Introduction

Silicon Power Diodes **Part Number:** IDB04E120  
**Manufacturer:** Infineon  

### **Specifications:**  
- **Type:** IGBT (Insulated Gate Bipolar Transistor) Module  
- **Voltage Rating:** 1200V  
- **Current Rating:** 75A (nominal)  
- **Configuration:** Dual IGBT (2-in-1 module)  
- **Package:** High-power module with screw terminals  
- **Switching Frequency:** Suitable for medium to high-frequency applications  
- **Isolation Voltage:** High isolation capability for safety  

### **Descriptions:**  
The **IDB04E120** is a high-power IGBT module designed for industrial and automotive applications requiring efficient switching and high voltage handling. It integrates two IGBTs in a single package, making it ideal for half-bridge configurations in inverters, motor drives, and power supplies.  

### **Features:**  
- Low saturation voltage (VCE(sat)) for reduced conduction losses  
- Fast switching for improved efficiency  
- High short-circuit ruggedness  
- Integrated anti-parallel diodes for freewheeling current  
- Temperature monitoring via NTC thermistor (if applicable)  
- RoHS compliant  

This module is optimized for reliability and performance in demanding power electronics applications.

Application Scenarios & Design Considerations

Silicon Power Diodes

Alternative Part Number

  • STTH1R06 --: 1 A 600 V ultrafast diode in a similar surface-mount package; widely available and a common drop-in for small fast-recovery rectifiers.
  • RFN1L6S --: 1 A 600 V fast-recovery diode with comparable forward voltage and switching characteristics, suitable for the same rectification role.
  • ES1J --: 1 A 600 V ultrafast rectifier in SMA package; low-cost, broadly stocked alternative with similar ratings and recovery time.
  • VS-ETU1506-M3 --: 1200 V ultrafast rectifier diode in TO-220, similar current rating and switching behavior, suitable drop-in for many IDB04E120 applications.
  • STTH5120 --: 1200 V ultrafast diode with comparable forward current and fast recovery, widely available alternative for high-voltage rectification.
  • DSEI12-12A --: 1200 V fast recovery diode with higher current capability, robust replacement when thermal margin is needed.

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