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IXTQ16N50P from IXYS

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IXTQ16N50P

Manufacturer: IXYS

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Partnumber Manufacturer Quantity Availability
IXTQ16N50P IXYS 20 In Stock

Description and Introduction

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated The IXTQ16N50P is a power MOSFET manufactured by IXYS. Below are the specifications, descriptions, and features based on factual data:  

### **Specifications:**  
- **Voltage Rating (VDSS):** 500V  
- **Current Rating (ID):** 16A  
- **Power Dissipation (PD):** 300W  
- **On-Resistance (RDS(on)):** 0.35Ω (typical)  
- **Gate Threshold Voltage (VGS(th)):** 4V (typical)  
- **Input Capacitance (Ciss):** 1800pF (typical)  
- **Output Capacitance (Coss):** 300pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-247  

### **Description:**  
The IXTQ16N50P is a high-voltage N-channel MOSFET designed for power switching applications. It offers low on-resistance and high switching performance, making it suitable for inverters, motor drives, and power supplies.  

### **Features:**  
- **High Voltage Capability:** 500V breakdown voltage.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **High Power Dissipation:** Robust thermal performance.  
- **Avalanche Energy Rated:** Enhanced ruggedness in harsh conditions.  
- **TO-247 Package:** Provides efficient heat dissipation.  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

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