MegaMOSTMFET The IXTH35N30 is a power MOSFET manufactured by IXYS. Below are its specifications, descriptions, and features based on factual information:
### **Specifications:**
- **Manufacturer:** IXYS
- **Part Number:** IXTH35N30
- **Transistor Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 300V
- **Continuous Drain Current (ID):** 35A
- **Pulsed Drain Current (IDM):** 140A
- **Power Dissipation (PD):** 300W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.085Ω (typical) at VGS = 10V
- **Input Capacitance (Ciss):** 1800pF (typical)
- **Output Capacitance (Coss):** 400pF (typical)
- **Reverse Transfer Capacitance (Crss):** 80pF (typical)
- **Turn-On Delay Time (td(on)):** 15ns (typical)
- **Turn-Off Delay Time (td(off)):** 45ns (typical)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-247
### **Descriptions:**
The IXTH35N30 is a high-voltage N-Channel MOSFET designed for power switching applications. It offers low on-resistance and high-speed switching performance, making it suitable for high-efficiency power supplies, motor control, and industrial applications.
### **Features:**
- **High Voltage Rating:** 300V VDSS
- **Low On-Resistance:** Minimizes conduction losses
- **High Current Capability:** 35A continuous, 140A pulsed
- **Fast Switching:** Optimized for high-frequency applications
- **Robust Thermal Performance:** TO-247 package for efficient heat dissipation
- **Avalanche Energy Rated:** Enhanced ruggedness in harsh conditions
This information is strictly based on the manufacturer's datasheet and technical specifications.
