HiPerFET Power MOSFETs Q2-Class The **IXFX52N60Q2** is a power MOSFET manufactured by **IXYS**. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** IXYS
- **Part Number:** IXFX52N60Q2
- **Device Type:** N-Channel Power MOSFET
- **Voltage Rating (VDSS):** 600V
- **Current Rating (ID):** 52A (continuous at 25°C)
- **Pulsed Drain Current (IDM):** 208A
- **Power Dissipation (PD):** 520W (at 25°C case temperature)
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.06Ω (typical at VGS = 10V)
- **Input Capacitance (Ciss):** 4800pF (typical)
- **Output Capacitance (Coss):** 1100pF (typical)
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)
- **Turn-On Delay Time (td(on)):** 20ns (typical)
- **Rise Time (tr):** 60ns (typical)
- **Turn-Off Delay Time (td(off)):** 90ns (typical)
- **Fall Time (tf):** 40ns (typical)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-264 (3-pin)
### **Descriptions:**
The **IXFX52N60Q2** is a high-voltage N-Channel MOSFET designed for power switching applications. It features low on-resistance, high current capability, and fast switching performance, making it suitable for high-efficiency power conversion systems.
### **Features:**
- **High Voltage Rating (600V)** – Suitable for industrial and automotive applications.
- **Low On-Resistance (0.06Ω)** – Reduces conduction losses.
- **Fast Switching Speed** – Enhances efficiency in high-frequency circuits.
- **High Current Handling (52A continuous, 208A pulsed)** – Supports robust power delivery.
- **High Power Dissipation (520W)** – Ensures thermal stability in demanding environments.
- **TO-264 Package** – Provides strong thermal performance and mechanical durability.
This information is strictly based on the manufacturer's datasheet and technical specifications.
