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IXFX21N100Q from IXYS

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IXFX21N100Q

Manufacturer: IXYS

HiPerFET Power MOSFETs Q-CLASS

Partnumber Manufacturer Quantity Availability
IXFX21N100Q IXYS 151 In Stock

Description and Introduction

HiPerFET Power MOSFETs Q-CLASS The IXFX21N100Q is a high-voltage N-Channel MOSFET manufactured by IXYS (now part of Littelfuse). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 1000V  
- **Continuous Drain Current (ID):** 21A  
- **Pulsed Drain Current (IDM):** 84A  
- **Power Dissipation (PD):** 300W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.45Ω (typical) at VGS = 10V  
- **Input Capacitance (Ciss):** 2100pF (typical)  
- **Output Capacitance (Coss):** 300pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 30pF (typical)  
- **Turn-On Delay Time (td(on)):** 25ns (typical)  
- **Turn-Off Delay Time (td(off)):** 100ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Description:**  
The IXFX21N100Q is a high-voltage, high-current N-Channel MOSFET designed for power switching applications. It features low on-resistance and fast switching characteristics, making it suitable for high-efficiency power conversion systems.  

### **Features:**  
- **High Voltage Capability:** 1000V breakdown voltage  
- **Low On-Resistance:** Minimizes conduction losses  
- **Fast Switching:** Optimized for high-frequency applications  
- **High Current Handling:** Supports up to 21A continuous current  
- **Robust Thermal Performance:** 300W power dissipation capability  
- **TO-247 Package:** Industry-standard package for power applications  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

HiPerFET Power MOSFETs Q-CLASS

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