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IXFN48N50 from IXYS

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IXFN48N50

Manufacturer: IXYS

HiPerFET Power MOSFETs

Partnumber Manufacturer Quantity Availability
IXFN48N50 IXYS 1500 In Stock

Description and Introduction

HiPerFET Power MOSFETs The IXFN48N50 is a power MOSFET manufactured by IXYS. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** IXYS  
- **Part Number:** IXFN48N50  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDS):** 500V  
- **Current Rating (ID):** 48A (continuous)  
- **Power Dissipation (PD):** 600W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.065Ω (typical)  
- **Input Capacitance (Ciss):** 5600pF (typical)  
- **Output Capacitance (Coss):** 900pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)  
- **Turn-On Delay Time (td(on)):** 20ns (typical)  
- **Rise Time (tr):** 60ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Fall Time (tf):** 30ns (typical)  
- **Package:** TO-264 (Modified)  

### **Descriptions and Features:**  
- Designed for high-power switching applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance for efficient operation.  
- High voltage and current handling capability.  
- Robust thermal performance due to the TO-264 package.  
- Suitable for applications such as power supplies, motor drives, and inverters.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

HiPerFET Power MOSFETs

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