NPT3 IGBT with Diode The IXER35N120D1 is a power semiconductor device manufactured by IXYS. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** IXYS
- **Part Number:** IXER35N120D1
- **Device Type:** IGBT (Insulated Gate Bipolar Transistor)
- **Voltage Rating (VCES):** 1200V
- **Current Rating (IC @ 25°C):** 35A
- **Maximum Collector Current (ICM):** 70A (pulsed)
- **Power Dissipation (Ptot):** 200W
- **Gate-Emitter Voltage (VGE):** ±20V
- **Collector-Emitter Saturation Voltage (VCE(sat)):** 2.5V (typical)
- **Switching Speed:** Fast switching with low switching losses
- **Operating Temperature Range:** -40°C to +150°C
- **Package Type:** TO-247
### **Descriptions:**
- The IXER35N120D1 is a high-voltage IGBT designed for power switching applications.
- It features low conduction and switching losses, making it suitable for high-efficiency power conversion.
- The device is optimized for motor drives, inverters, UPS systems, and industrial power supplies.
### **Features:**
- **High Voltage Capability:** 1200V breakdown voltage for robust performance in high-power applications.
- **Low Saturation Voltage:** Reduces conduction losses for improved efficiency.
- **Fast Switching:** Minimizes switching losses in high-frequency applications.
- **High Current Handling:** Supports continuous and pulsed current operations.
- **Temperature Stability:** Operates reliably across a wide temperature range.
- **Robust Packaging:** TO-247 package ensures good thermal dissipation and mechanical durability.
This information is based solely on the available knowledge base for the IXER35N120D1 from IXYS.
