IC Phoenix logo

Home ›  I  › I47 > ISL9R860S3ST

ISL9R860S3ST from FSC,Fairchild Semiconductor

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

ISL9R860S3ST

Manufacturer: FSC

8A, 600V Stealth Single Diode

Partnumber Manufacturer Quantity Availability
ISL9R860S3ST FSC 100 In Stock

Description and Introduction

8A, 600V Stealth Single Diode The ISL9R860S3ST is a power MOSFET manufactured by Renesas Electronics.  

**Manufacturer:** Renesas Electronics  

**FSC (Federal Supply Code) Specifications:**  
- Not explicitly listed in the provided knowledge base.  

**Descriptions and Features:**  
- **Type:** N-Channel MOSFET  
- **Voltage Rating:** 600V  
- **Current Rating:** 8.6A  
- **RDS(ON):** 0.86Ω (typical)  
- **Package:** TO-220F (isolated type)  
- **Applications:** Power supplies, motor control, inverters, and other high-voltage switching applications  
- **Features:**  
  - Low gate charge  
  - Fast switching speed  
  - High avalanche energy capability  
  - Improved dv/dt capability  

For detailed FSC specifications, refer to official Renesas documentation or procurement databases.

Application Scenarios & Design Considerations

8A, 600V Stealth Single Diode
Partnumber Manufacturer Quantity Availability
ISL9R860S3ST FAIRCHILD 210 In Stock

Description and Introduction

8A, 600V Stealth Single Diode The ISL9R860S3ST is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Fairchild Semiconductor (now ON Semiconductor)  
- **Part Number:** ISL9R860S3ST  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDS):** 600V  
- **Current Rating (ID):** 8.6A (continuous)  
- **RDS(ON) (Max):** 0.86Ω @ 10V, 1.1Ω @ 4.5V  
- **Gate Charge (Qg):** 18nC (typical)  
- **Input Capacitance (Ciss):** 480pF (typical)  
- **Output Capacitance (Coss):** 45pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 6pF (typical)  
- **Avalanche Energy (EAS):** 240mJ (rated)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-220F (Fully Insulated)  

### **Descriptions:**  
- The ISL9R860S3ST is a high-voltage N-Channel MOSFET designed for switching applications.  
- It features low gate charge and low RDS(ON) for improved efficiency in power conversion circuits.  
- The fully insulated TO-220F package enhances thermal performance and simplifies mounting.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Energy Rated:** Ensures reliability in rugged conditions.  
- **Fully Insulated Package:** Provides electrical isolation for improved safety.  
- **Pb-Free and RoHS Compliant:** Meets environmental standards.  

This information is based on Fairchild Semiconductor's datasheet for the ISL9R860S3ST. For detailed application notes or testing conditions, refer to the official documentation.

Application Scenarios & Design Considerations

8A, 600V Stealth Single Diode

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips