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ISL9R860S3ST from FSC,Fairchild Semiconductor

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ISL9R860S3ST

Manufacturer: FSC

8A, 600V Stealth Single Diode

Partnumber Manufacturer Quantity Availability
ISL9R860S3ST FSC 100 In Stock

Description and Introduction

8A, 600V Stealth Single Diode The ISL9R860S3ST is a power MOSFET manufactured by Renesas Electronics.  

**Manufacturer:** Renesas Electronics  

**FSC (Federal Supply Code) Specifications:**  
- Not explicitly listed in the provided knowledge base.  

**Descriptions and Features:**  
- **Type:** N-Channel MOSFET  
- **Voltage Rating:** 600V  
- **Current Rating:** 8.6A  
- **RDS(ON):** 0.86Ω (typical)  
- **Package:** TO-220F (isolated type)  
- **Applications:** Power supplies, motor control, inverters, and other high-voltage switching applications  
- **Features:**  
  - Low gate charge  
  - Fast switching speed  
  - High avalanche energy capability  
  - Improved dv/dt capability  

For detailed FSC specifications, refer to official Renesas documentation or procurement databases.

Partnumber Manufacturer Quantity Availability
ISL9R860S3ST FAIRCHILD 210 In Stock

Description and Introduction

8A, 600V Stealth Single Diode The ISL9R860S3ST is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Fairchild Semiconductor (now ON Semiconductor)  
- **Part Number:** ISL9R860S3ST  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDS):** 600V  
- **Current Rating (ID):** 8.6A (continuous)  
- **RDS(ON) (Max):** 0.86Ω @ 10V, 1.1Ω @ 4.5V  
- **Gate Charge (Qg):** 18nC (typical)  
- **Input Capacitance (Ciss):** 480pF (typical)  
- **Output Capacitance (Coss):** 45pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 6pF (typical)  
- **Avalanche Energy (EAS):** 240mJ (rated)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-220F (Fully Insulated)  

### **Descriptions:**  
- The ISL9R860S3ST is a high-voltage N-Channel MOSFET designed for switching applications.  
- It features low gate charge and low RDS(ON) for improved efficiency in power conversion circuits.  
- The fully insulated TO-220F package enhances thermal performance and simplifies mounting.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Energy Rated:** Ensures reliability in rugged conditions.  
- **Fully Insulated Package:** Provides electrical isolation for improved safety.  
- **Pb-Free and RoHS Compliant:** Meets environmental standards.  

This information is based on Fairchild Semiconductor's datasheet for the ISL9R860S3ST. For detailed application notes or testing conditions, refer to the official documentation.

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