IC Phoenix logo

Home ›  I  › I47 > ISL9R460P2

ISL9R460P2 from FSC,Fairchild Semiconductor

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

ISL9R460P2

Manufacturer: FSC

4A,600V Stealth Diode

Partnumber Manufacturer Quantity Availability
ISL9R460P2 ,ISL9R460P2 FSC 6000 In Stock

Description and Introduction

4A,600V Stealth Diode The ISL9R460P2 is a power MOSFET manufactured by FSC (Fairchild Semiconductor). Below are its specifications, descriptions, and features:  

### **Specifications:**  
- **Manufacturer:** FSC (Fairchild Semiconductor)  
- **Type:** N-Channel MOSFET  
- **Voltage Rating (VDS):** 600V  
- **Current Rating (ID):** 4.6A (continuous)  
- **Power Dissipation (PD):** 38W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V  
- **Package:** TO-220F (Fully Insulated)  

### **Descriptions:**  
- Designed for high-voltage, high-speed switching applications.  
- Suitable for power supplies, motor control, and other industrial applications.  
- Features a fully insulated TO-220F package for improved thermal performance and safety.  

### **Features:**  
- **Low Gate Charge:** Enhances switching efficiency.  
- **Fast Switching Speed:** Reduces switching losses.  
- **Avalanche Energy Specified:** Ensures reliability under high-energy conditions.  
- **Fully Insulated Package:** Eliminates the need for an additional insulating pad.  

This information is based solely on the provided knowledge base.

Application Scenarios & Design Considerations

4A,600V Stealth Diode
Partnumber Manufacturer Quantity Availability
ISL9R460P2 Fairchild 50 In Stock

Description and Introduction

4A,600V Stealth Diode The **ISL9R460P2** is a power MOSFET manufactured by **Fairchild Semiconductor** (now part of ON Semiconductor).  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Voltage Rating (VDS):** 600V  
- **Current Rating (ID):** 4.5A (continuous)  
- **Power Dissipation (PD):** 38W  
- **RDS(ON) (Max):** 2.6Ω @ 10V, 3.2Ω @ 4.5V  
- **Gate Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 330pF (typical)  
- **Output Capacitance (Coss):** 22pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 4.5pF (typical)  
- **Switching Speed:** Fast switching performance  
- **Package:** TO-220F (fully insulated)  

### **Descriptions & Features:**  
- Designed for **high-efficiency power switching** applications.  
- **Low gate charge** for improved switching performance.  
- **Fully isolated TO-220F package** for better thermal management and electrical isolation.  
- Suitable for **SMPS (Switched-Mode Power Supplies), inverters, and motor control** applications.  
- **Avalanche energy rated** for ruggedness in high-voltage environments.  

This MOSFET is optimized for **high-voltage, high-speed switching** with low conduction losses.  

Would you like additional details on any specific parameter?

Application Scenarios & Design Considerations

4A,600V Stealth Diode

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips