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ISL9R18120P2 from FAIRCHIL,Fairchild Semiconductor

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46.875ms

ISL9R18120P2

Manufacturer: FAIRCHIL

18A, 1200V Stealth Diode

Partnumber Manufacturer Quantity Availability
ISL9R18120P2 FAIRCHIL 150 In Stock

Description and Introduction

18A, 1200V Stealth Diode The **ISL9R18120P2** is a power MOSFET manufactured by **FAIRCHILD (now part of ON Semiconductor)**.  

### **Key Specifications:**  
- **Voltage Rating (VDS):** 1200V  
- **Current Rating (ID):** 18A (at 25°C)  
- **RDS(ON) (Max):** 0.18Ω (at VGS = 15V)  
- **Gate-Source Voltage (VGS):** ±30V  
- **Power Dissipation (PD):** 300W  
- **Package:** TO-247  

### **Features:**  
- **Super Junction MOSFET:** Offers low conduction and switching losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Energy Rated:** Ensures ruggedness in harsh conditions.  
- **Low Gate Charge (Qg):** Improves efficiency in switching applications.  
- **Applications:** Used in power supplies, inverters, motor drives, and industrial systems.  

This MOSFET is designed for high-voltage, high-efficiency power conversion applications.

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