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IS62VV25616LL-70MI from ICSI

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IS62VV25616LL-70MI

Manufacturer: ICSI, ISSI, ISSI,ISSI一

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

Partnumber Manufacturer Quantity Availability
IS62VV25616LL-70MI,IS62VV25616LL70MI ICSI, ISSI, ISSI,ISSI一 2382 In Stock

Description and Introduction

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM The IS62VV25616LL-70MI is a high-speed CMOS static RAM (SRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are its specifications, descriptions, and features based on factual information:

### **Specifications:**
- **Density:** 4Mbit (256K x 16)
- **Organization:** 262,144 words × 16 bits
- **Supply Voltage:** 3.3V (±10%)
- **Access Time:** 70ns
- **Operating Current:** 30mA (typical)
- **Standby Current:** 10μA (typical)
- **Package:** 44-pin TSOP-II (Type II)
- **Operating Temperature Range:** -40°C to +85°C (Industrial Grade)
- **Interface:** Parallel
- **Data Retention Voltage:** 2V (minimum)

### **Descriptions:**
- The IS62VV25616LL-70MI is a low-power, high-performance asynchronous SRAM.
- It is designed for applications requiring fast access times and low power consumption.
- The device supports both industrial temperature ranges and is suitable for battery-powered or portable devices.
- It features a fully static operation, meaning no clock or refresh is required.

### **Features:**
- **High-Speed Access:** 70ns maximum access time.
- **Low Power Consumption:**  
  - Active current: 30mA (typical)  
  - Standby current: 10μA (typical)  
- **Wide Voltage Range:** Operates at 3.3V (±10%).
- **Industrial Temperature Range:** -40°C to +85°C.
- **Tri-State Outputs:** Allows direct connection to a common bus.
- **CMOS Technology:** Ensures low power and high noise immunity.
- **Automatic Power-Down:** When deselected (CE# high), the device enters standby mode.
- **Data Retention:** Guaranteed at 2V minimum supply voltage.
- **Lead-Free & RoHS Compliant:** Meets environmental standards.

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

Alternative Part Number

  • CY62167EV30LL-45ZXI --: 16-Mbit low-power asynchronous SRAM in the same 256K x 16 organization with comparable access speed and 3V supply, widely available and pin-compatible in TSOP packages.
  • AS6C62256-55SIN --: Low-power CMOS SRAM from Alliance Memory that directly targets legacy ICSI SRAM sockets, offering similar 256K x 16 density and 3.3V operation as a drop-in style replacement.
  • IS61WV25616EDBLL-10TLI --: ISSI high-speed 256K x 16 asynchronous SRAM with 3.3V supply and similar pinout, suitable as a functional substitute when slightly faster access timing is acceptable.
  • AS6C1616-55TIN --: 16-Mbit 3V low-power SRAM organized 1M x 16, pin-compatible with the IS62VV25616 family and widely used as a direct second source.
  • LY62L25616ML-55LLI --: Low-power 256K x 16 asynchronous SRAM with 3V operation and similar access timing, offered as a cost-effective compatible replacement.

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