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IS41LV16105-50T from ISSI

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IS41LV16105-50T

Manufacturer: ISSI, ICSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Partnumber Manufacturer Quantity Availability
IS41LV16105-50T,IS41LV1610550T ISSI, ICSI 3665 In Stock

Description and Introduction

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE The IS41LV16105-50T is a high-speed 16Mbit (1M x 16) CMOS synchronous DRAM manufactured by ISSI (Integrated Silicon Solution Inc.). Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Density:** 16Mbit (1,048,576 words × 16 bits)  
- **Organization:** 1M × 16  
- **Voltage Supply:** 3.3V ± 0.3V  
- **Speed Grade:** 50T (50ns access time)  
- **Refresh Cycles:** 4,096 refresh cycles every 64ms  
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Package Type:** 50-pin TSOP (Thin Small Outline Package)  

### **Descriptions:**
- The IS41LV16105-50T is a synchronous DRAM (SDRAM) designed for high-performance applications requiring fast data access.  
- It operates in sync with the system clock, enabling efficient data transfer rates.  
- Features a fully synchronous pipeline architecture for high-speed operation.  
- Supports burst mode for sequential data access.  

### **Features:**
- **Synchronous Operation:** Clock-controlled command and data operations.  
- **Burst Mode Support:** Programmable burst lengths (1, 2, 4, 8, or full page).  
- **Auto Refresh & Self Refresh:** Supports power-saving modes.  
- **CAS Latency Options:** Configurable (2 or 3 cycles).  
- **Single 3.3V Power Supply:** Low power consumption.  
- **Compatible with JEDEC Standards:** Ensures industry-standard compliance.  

This SDRAM is commonly used in networking, telecommunications, embedded systems, and other high-speed memory applications.

Application Scenarios & Design Considerations

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

Alternative Part Number

  • AS4C1M16S-50TCN --: Alliance Memory specializes in drop-in replacements for legacy ISSI SRAM/DRAM parts; this 1M x 16 asynchronous SRAM matches the 50 ns speed grade and TSOP package, making it the closest functional substitute.
  • CY7C1041CV33-10ZXC --: Cypress 1M x 16 asynchronous SRAM with 3.3 V supply and TSOP II package; a widely available alternative with similar organization, though the speed grade is 10 ns rather than 50 ns.
  • IS61LV10248-55T --: ISSI's own 1M x 8 low-voltage SRAM in the same family and package style; usable if the design can accommodate a x8 organization instead of x16, and it shares the same 3.3 V interface and 55 ns timing class.
  • AS4C1M16S-5TCN --: Alliance Memory specializes in legacy DRAM drop-in replacements; this 1M x 16 EDO DRAM matches the IS41LV16105 organization and 50ns speed grade.
  • MT4C1M16C3TG-5 --: Micron 1M x 16 EDO DRAM with 50ns access time, functionally equivalent to the IS41LV16105 in the same TSOP package.
  • HY51V16165HG-50 --: Hynix 1M x 16 EDO DRAM rated at 50ns, a comparable 3.3V asynchronous DRAM suitable as a functional substitute.

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