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IS41LV16100S-50T

Manufacturer: ICSI, ISSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Partnumber Manufacturer Quantity Availability
IS41LV16100S-50T,IS41LV16100S50T ICSI, ISSI 751 In Stock

Description and Introduction

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE The IS41LV16100S-50T is a 16Mbit (1M x 16) high-speed CMOS synchronous DRAM (SDRAM) manufactured by ICSI (Integrated Circuit Solution Inc.).  

### **Specifications:**  
- **Density:** 16Mbit (1M words × 16 bits)  
- **Organization:** 1,048,576 words × 16 bits  
- **Speed Grade:** 50T (5ns access time, 100MHz operation)  
- **Voltage Supply:** 3.3V (±0.3V)  
- **Package:** 54-pin TSOP II (400mil)  
- **Refresh Cycles:** 4,096 refresh cycles every 64ms  
- **CAS Latency:** 2 or 3 (programmable)  
- **Burst Length:** 1, 2, 4, 8, or full page (programmable)  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  

### **Descriptions & Features:**  
- **High-Speed Operation:** Supports 100MHz clock frequency with a 5ns access time.  
- **Synchronous Interface:** All signals are synchronized with the positive edge of the clock.  
- **Auto Refresh & Self Refresh:** Supports both modes for power efficiency.  
- **Programmable Burst Length:** Configurable for 1, 2, 4, 8, or full-page bursts.  
- **Low Power Consumption:** Standby and active power-saving modes.  
- **Single 3.3V Power Supply:** Compatible with standard 3.3V systems.  
- **Four Banks Operation:** Allows concurrent operations for improved performance.  
- **Compliant with JEDEC Standards:** Ensures compatibility with industry-standard SDRAM controllers.  

This SDRAM is commonly used in applications requiring high-speed memory, such as networking equipment, telecommunications, and embedded systems.

Application Scenarios & Design Considerations

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Alternative Part Number

  • AS4C1M16S-5TCN --: 1M x 16 asynchronous DRAM in a 50-pin TSOP package with 50 ns speed grade, a direct functional replacement for the IS41LV16100S-50T.
  • MT4C1M16C3TG-5 --: 1M x 16 EDO DRAM in a 50-pin TSOP with comparable 50 ns access time, suitable as a pin-compatible substitute.
  • HM51W16100TT-5 --: 1M x 16 fast page mode DRAM in a 50-pin TSOP with 50 ns speed, an alternative legacy DRAM option for the same socket.
  • CY7C1041CV33-10ZXC --: 1M x 16 asynchronous SRAM in TSOP package with similar access timing, well-established and readily available alternative.
  • IS61LV10248-55T --: 1M x 16 low-voltage asynchronous SRAM from the same vendor family with comparable 55 ns speed and pinout.
  • AS4C1M16S-7TCN --: Pin-compatible 16Mb (1M x 16) asynchronous DRAM in the same 50-pin TSOP package, widely used as a drop-in replacement for ISSI 16Mb EDO/FPM parts.
  • HM5116100F-5 --: 16Mb (1M x 16) fast page mode DRAM in a 50-pin TSOP, offering similar density, organization, and access time for legacy designs.

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