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IS41LV16100B-60KI from ISSI

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IS41LV16100B-60KI

Manufacturer: ISSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Partnumber Manufacturer Quantity Availability
IS41LV16100B-60KI,IS41LV16100B60KI ISSI 5530 In Stock

Description and Introduction

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE The IS41LV16100B-60KI is a 16Mbit (1M x 16) CMOS low-power SRAM manufactured by ISSI (Integrated Silicon Solution Inc.). Below are its specifications, descriptions, and features:

### **Specifications:**
- **Density:** 16Mbit (1M words × 16 bits)  
- **Organization:** 1,048,576 words × 16 bits  
- **Supply Voltage:** 3.3V (±10%)  
- **Access Time:** 60ns  
- **Operating Current:** 50mA (typical)  
- **Standby Current:** 5mA (typical)  
- **Package:** 48-pin TSOP (Type I)  
- **Operating Temperature Range:** -40°C to +85°C  

### **Descriptions:**
- **Type:** Low-power, asynchronous SRAM  
- **Technology:** CMOS  
- **Interface:** Parallel  
- **Refresh:** Not required (static RAM)  
- **Data Retention:** Guaranteed at 2.0V  

### **Features:**
- **Low Power Consumption:**  
  - Active current: 50mA (typical)  
  - Standby current: 5mA (typical)  
- **Wide Voltage Range:** 3.3V ±10%  
- **Fully Static Operation:** No clock or refresh required  
- **Tri-State Outputs:** Supports bus sharing  
- **TTL-Compatible Inputs and Outputs**  
- **Industrial Temperature Range:** -40°C to +85°C  
- **High Reliability:**  
  - Endurance: Infinite read/write cycles  
  - Data retention without power supply  

This SRAM is designed for applications requiring high-speed, low-power memory, such as embedded systems, networking equipment, and industrial controls.

Application Scenarios & Design Considerations

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Alternative Part Number

  • AS4C1M16S-6TIN --: Pin-compatible 1M x 16 asynchronous DRAM in the same 50-pin TSOP-II package with 60 ns speed grade, widely used as a drop-in replacement for ISSI IS41LV16100 parts.
  • MT4C1M16C3DJ-6 --: 1M x 16 EDO/FPM DRAM with 60 ns access time in a 50-pin TSOP package, functionally equivalent to the IS41LV16100B and available from a major memory supplier.
  • EM638325TS-6G --: 1M x 16 high-speed asynchronous DRAM rated at 60 ns in a 50-pin TSOP-II package, offering comparable timing and interface as an alternative source.

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