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IS41C16128-35K from ICSI

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IS41C16128-35K

Manufacturer: ICSI, ISSI

128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Partnumber Manufacturer Quantity Availability
IS41C16128-35K,IS41C1612835K ICSI, ISSI 421 In Stock

Description and Introduction

128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE The IS41C16128-35K is a high-speed CMOS Static RAM (SRAM) manufactured by Integrated Silicon Solution Inc. (ISSI). Below are the specifications, descriptions, and features based on factual data:

### **Specifications:**  
- **Part Number:** IS41C16128-35K  
- **Type:** 16Mb (1M x 16) CMOS SRAM  
- **Speed:** 35ns access time  
- **Voltage Supply:** 3.3V (±10%)  
- **Organization:** 1,048,576 words × 16 bits  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **Package:** 44-pin TSOP II (Type II)  

### **Descriptions:**  
- The IS41C16128-35K is a high-performance asynchronous SRAM designed for applications requiring fast access times and low power consumption.  
- It operates with a single 3.3V power supply and features a fully static memory core, allowing for no clock or refresh requirements.  
- The device is compatible with industrial-standard pinouts and interfaces.  

### **Features:**  
- **High-Speed Access:** 35ns access time  
- **Low Power Consumption:**  
  - Active Current: 80mA (typical)  
  - Standby Current: 10mA (typical)  
- **Single 3.3V Power Supply**  
- **Fully Static Operation:** No refresh or clock required  
- **Tri-State Outputs**  
- **TTL-Compatible Inputs and Outputs**  
- **Industrial-Standard Pinout**  
- **Lead-Free & RoHS Compliant**  

This information is based on the manufacturer's datasheet for the IS41C16128-35K SRAM.

Application Scenarios & Design Considerations

128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Alternative Part Number

  • AS4C1M16S-35TC --: 1M x 16 asynchronous SRAM with 35 ns access time, pin-compatible with the IS41C16128 and widely used as a drop-in replacement.
  • CY7C1041CV33-35ZC --: 1M x 16 high-speed CMOS SRAM with 35 ns speed grade, functionally equivalent and available in the same TSOP package.
  • IS61WV102416BLL-35TLI --: 1M x 16 asynchronous SRAM from a different series with 35 ns access time, suitable as a functional substitute for the ICSI device.
  • MT4C1M16C3-35 --: Micron 16Mb FPM DRAM organized 1M x 16 with 35ns access time, same asynchronous DRAM architecture and pinout family, suitable as a direct replacement in legacy designs.
  • HM5116100-35 --: Hitachi 16Mb FPM DRAM in 1M x 16 organization with 35ns speed, same 5V asynchronous DRAM interface, a well-known second-source equivalent for the IS41C16128.

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