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IRLR3103PBF from IR,International Rectifier

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IRLR3103PBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRLR3103PBF IR 200 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRLR3103PBF is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 46A (at 25°C)  
- **Pulsed Drain Current (IDM):** 180A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 110W (at 25°C)  
- **RDS(on) (Max):** 0.0065Ω (at VGS = 10V, ID = 25A)  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.0V  
- **Input Capacitance (Ciss):** 3000pF (typical)  
- **Operating Junction Temperature Range:** -55°C to +175°C  

### **Description:**  
The IRLR3103PBF is a HEXFET power MOSFET designed for high-efficiency switching applications. It features low on-state resistance (RDS(on)) and fast switching speeds, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.  

### **Features:**  
- **Advanced Process Technology:** Optimized for low RDS(on) and high current handling.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Specified:** Enhances ruggedness in inductive load conditions.  
- **Fully Characterized for 175°C Operation:** Reliable performance at high temperatures.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

The device is available in a TO-252 (DPAK) package.  

(End of factual information.)

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