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IRLML2502TRPBF-- from IR,International Rectifier

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15.625ms

IRLML2502TRPBF--

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package

Partnumber Manufacturer Quantity Availability
IRLML2502TRPBF--,IRLML2502TRPBF IR 36000 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package The IRLML2502TRPBF is a power MOSFET manufactured by Infineon Technologies (formerly International Rectifier, IR). Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies (formerly International Rectifier, IR)  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDS):** 20V  
- **Continuous Drain Current (ID):** 4.2A  
- **Pulsed Drain Current (IDM):** 17A  
- **Gate-Source Voltage (VGS):** ±12V  
- **On-Resistance (RDS(on)):** 45mΩ (max) at VGS = 4.5V  
- **Power Dissipation (PD):** 1.3W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOT-23  

### **Descriptions:**  
The IRLML2502TRPBF is a small-signal N-channel MOSFET designed for low-voltage, high-efficiency switching applications. It is optimized for use in power management, load switching, and DC-DC conversion circuits.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- Fast switching performance  
- Logic-level gate drive (fully enhanced at 4.5V)  
- Lead-free and RoHS compliant  
- SOT-23 package for space-constrained applications  

This information is based solely on the manufacturer's datasheet and specifications.

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