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IRLML2060TRPBF from IR,International Rectifier

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IRLML2060TRPBF

Manufacturer: IR

60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package

Partnumber Manufacturer Quantity Availability
IRLML2060TRPBF IR 24000 In Stock

Description and Introduction

60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package The IRLML2060TRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 20V  
- **Continuous Drain Current (ID):** 3.7A  
- **Pulsed Drain Current (IDM):** 15A  
- **Gate-Source Voltage (VGS):** ±12V  
- **On-Resistance (RDS(on)):**  
  - 28mΩ (at VGS = 4.5V)  
  - 22mΩ (at VGS = 10V)  
- **Power Dissipation (PD):** 1.3W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Threshold Voltage (VGS(th)):** 0.65V (min) to 1.35V (max)  

### **Description:**  
The IRLML2060TRPBF is an N-channel MOSFET designed for low-voltage, high-efficiency switching applications. It is optimized for use in power management, DC-DC converters, and load switching circuits.  

### **Features:**  
- **Low On-Resistance:** Enhances efficiency in power applications.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage control signals (as low as 4.5V).  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  
- **SOT-23 Package:** Compact and suitable for space-constrained designs.  

This information is strictly factual and sourced from the manufacturer's datasheet.

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