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IRLML2030TRPBF from IR,International Rectifier

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7.813ms

IRLML2030TRPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package

Partnumber Manufacturer Quantity Availability
IRLML2030TRPBF IR 33000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package The IRLML2030TRPBF is a MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IRLML2030TRPBF  
- **Type:** N-Channel MOSFET  
- **Technology:** HEXFET® Power MOSFET  
- **Drain-Source Voltage (VDS):** 20V  
- **Continuous Drain Current (ID):** 3.7A  
- **Pulsed Drain Current (IDM):** 15A  
- **Gate-Source Voltage (VGS):** ±12V  
- **On-Resistance (RDS(on)):** 30mΩ (max) at VGS = 4.5V  
- **Power Dissipation (PD):** 1.3W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOT-23  

### **Descriptions:**
- The IRLML2030TRPBF is a small-signal N-Channel MOSFET designed for low-voltage, high-efficiency switching applications.  
- It is optimized for fast switching and low on-resistance, making it suitable for power management in portable electronics.  

### **Features:**
- **Low On-Resistance:** Ensures minimal power loss.  
- **Fast Switching Speed:** Ideal for high-frequency applications.  
- **Low Gate Charge:** Enhances efficiency in switching circuits.  
- **Small Form Factor:** SOT-23 package saves board space.  
- **AEC-Q101 Qualified:** Suitable for automotive applications.  

This information is based solely on the manufacturer's datasheet and specifications.

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