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IRLML0030TRPBF from IR,International Rectifier

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15.625ms

IRLML0030TRPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package

Partnumber Manufacturer Quantity Availability
IRLML0030TRPBF IR 33000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package The IRLML0030TRPBF is a MOSFET transistor manufactured by Infineon Technologies. Below are the factual details about its specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 5.3A  
- **Pulsed Drain Current (IDM):** 20A  
- **Gate-Source Voltage (VGS):** ±12V  
- **Power Dissipation (PD):** 1.3W  
- **On-Resistance (RDS(on)):** 30mΩ (at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 1V (typical)  
- **Input Capacitance (Ciss):** 500pF  
- **Output Capacitance (Coss):** 150pF  
- **Reverse Transfer Capacitance (Crss):** 50pF  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23  

### **Descriptions:**  
- The IRLML0030TRPBF is a small-signal N-Channel MOSFET designed for low-voltage, high-efficiency switching applications.  
- It is optimized for use in battery-powered circuits, power management, and load switching.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching speed.  
- Logic-level gate drive capability.  
- Lead-free and RoHS compliant.  
- Compact SOT-23 package for space-constrained applications.  

This information is sourced from Infineon's official datasheet and product documentation.

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