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IRLIZ34N from IR,International Rectifier

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IRLIZ34N

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package

Partnumber Manufacturer Quantity Availability
IRLIZ34N ,IRLIZ34N IR 2000 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package **Part Number:** IRLIZ34N  
**Manufacturer:** IR (International Rectifier)  

### **Specifications:**  
- **Type:** N-Channel HEXFET Power MOSFET  
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 110W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.034Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) – 2.0V (max)  
- **Input Capacitance (Ciss):** 1800pF  
- **Output Capacitance (Coss):** 600pF  
- **Reverse Transfer Capacitance (Crss):** 200pF  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Descriptions:**  
The IRLIZ34N is a high-performance N-Channel MOSFET designed for power switching applications. It features low on-resistance and fast switching speeds, making it suitable for high-efficiency power management in various circuits.  

### **Features:**  
- Low gate charge for improved switching performance  
- High current handling capability  
- Low thermal resistance  
- Avalanche energy rated  
- Improved dv/dt capability  
- Lead-free and RoHS compliant  

This MOSFET is commonly used in DC-DC converters, motor control, and power supply applications.

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