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IRLIZ14G from IR,International Rectifier

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IRLIZ14G

Manufacturer: IR

Single N-Channel HEXFET Power MOSFET

Partnumber Manufacturer Quantity Availability
IRLIZ14G IR 1000 In Stock

Description and Introduction

Single N-Channel HEXFET Power MOSFET The part **IRLIZ14G** is a power MOSFET manufactured by **Infineon Technologies**. Below are the key specifications, descriptions, and features based on the manufacturer's datasheet:  

### **Manufacturer:** Infineon Technologies  
### **Part Number:** IRLIZ14G  
### **Type:** N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 15A  
- **Pulsed Drain Current (IDM):** 60A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 0.065Ω (max) at VGS = 10V  
  - 0.085Ω (max) at VGS = 4.5V  
- **Power Dissipation (PD):** 48W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Package:** TO-220 (Through-Hole)  

### **Features:**  
- **Low On-Resistance:** Optimized for high-efficiency switching applications.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load conditions.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage control signals (4.5V).  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

### **Typical Applications:**  
- DC-DC converters  
- Motor control  
- Power management in automotive and industrial systems  
- Switching regulators  

This information is sourced from Infineon's official datasheet for the IRLIZ14G MOSFET.

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