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IRLI3705N from IR,International Rectifier

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IRLI3705N

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package

Partnumber Manufacturer Quantity Availability
IRLI3705N IR 100 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package The IRLI3705N is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** International Rectifier (IR)  
### **Part Number:** IRLI3705N  
### **Type:** N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 57A (at 25°C)  
- **Pulsed Drain Current (IDM):** 220A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.008Ω (max at VGS = 10V)  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRLI3705N is a high-performance N-Channel MOSFET designed for power switching applications. It features low on-resistance and high current handling capability, making it suitable for high-efficiency power conversion.  

### **Features:**  
- **Advanced HEXFET® Technology** for low conduction losses  
- **Ultra-Low On-Resistance (RDS(on))** for improved efficiency  
- **Fast Switching Speed**  
- **Avalanche Energy Specified** for ruggedness  
- **Fully Characterized for Dynamic Performance**  
- **Lead-Free & RoHS Compliant**  

This information is based solely on the manufacturer's datasheet and technical documentation.

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