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IRL520NSTRLPBF from IR,International Rectifier

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IRL520NSTRLPBF

Manufacturer: IR

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRL520NSTRLPBF IR 10000 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRL520NSTRLPBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 9.2A  
- **Pulsed Drain Current (IDM):** 37A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 48W  
- **On-Resistance (RDS(on)):** 0.27Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.0V  
- **Input Capacitance (Ciss):** 580pF  
- **Output Capacitance (Coss):** 110pF  
- **Reverse Transfer Capacitance (Crss):** 50pF  
- **Operating Temperature Range:** -55°C to +175°C  

### **Description:**  
The IRL520NSTRLPBF is an N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management, motor control, and DC-DC converter applications.  

### **Features:**  
- **Advanced Process Technology:** Low gate charge and high efficiency.  
- **Fast Switching Speed:** Optimized for high-frequency applications.  
- **Avalanche Energy Specified:** Enhances ruggedness in inductive load switching.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  
- **TO-252 (DPAK) Package:** Compact surface-mount design for efficient PCB space utilization.  

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to Infineon’s official documentation.

Application Scenarios & Design Considerations

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

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