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IRL3302S from IR,International Rectifier

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IRL3302S

Manufacturer: IR

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRL3302S IR 4300 In Stock

Description and Introduction

20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRL3302S is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from the manufacturer's datasheet:  

### **Manufacturer:** International Rectifier (IR)  
### **Part Number:** IRL3302S  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 8.0mΩ (max) at VGS = 10V  
  - 10mΩ (max) at VGS = 4.5V  
- **Power Dissipation (PD):** 48W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Gate Charge (Qg):** 25nC (typical)  
- **Input Capacitance (Ciss):** 1100pF (typical)  
- **Output Capacitance (Coss):** 300pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)  

### **Description:**  
The IRL3302S is a **HEXFET® Power MOSFET** designed for high-efficiency switching applications. It features ultra-low on-resistance and fast switching speeds, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.  

### **Features:**  
- **Advanced Process Technology** for low RDS(on)  
- **Dynamic dv/dt Rating** for improved ruggedness  
- **Fully Avalanche Rated** for reliability in harsh conditions  
- **Lead-Free & RoHS Compliant**  
- **Low Gate Charge** for high-frequency switching  
- **Logic-Level Gate Drive** (4.5V drive capability)  

### **Package:**  
- **TO-263 (D2PAK)** surface-mount package  

This information is sourced directly from the manufacturer's datasheet.

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