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IRL3103STRRPBF from IR,International Rectifier

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IRL3103STRRPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRL3103STRRPBF IR 6100 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRL3103STRRPBF is a power MOSFET manufactured by Infineon Technologies. Here are the key specifications, descriptions, and features from the manufacturer's datasheet:

### **Manufacturer:** Infineon Technologies  
### **Part Number:** IRL3103STRRPBF  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 64A (at 25°C)  
- **Pulsed Drain Current (IDM):** 256A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 4.5mΩ (max) at VGS = 10V  
  - 6.0mΩ (max) at VGS = 4.5V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** D2PAK (TO-263)  

### **Description:**  
The IRL3103STRRPBF is a N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load conditions.  
- **Fully Characterized Dynamic Performance:** Ensures reliable operation in switching circuits.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is sourced from the official Infineon Technologies datasheet for the IRL3103STRRPBF.

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