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IRG4PSH71UD from IR,International Rectifier

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IRG4PSH71UD

Manufacturer: IR

1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package

Partnumber Manufacturer Quantity Availability
IRG4PSH71UD IR 12000 In Stock

Description and Introduction

1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package The IRG4PSH71UD is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on factual information:

### **Specifications:**  
- **Voltage Rating (VCES):** 600V  
- **Current Rating (IC @ 25°C):** 75A  
- **Current Rating (IC @ 100°C):** 42A  
- **Maximum Power Dissipation (PD):** 200W  
- **Gate-Emitter Voltage (VGE):** ±20V  
- **Collector-Emitter Saturation Voltage (VCE(sat)):** 1.85V (typical at IC = 75A)  
- **Switching Speed:** Fast switching with low losses  
- **Operating Temperature Range (Tj):** -55°C to +150°C  

### **Descriptions:**  
- The IRG4PSH71UD is a high-speed, high-efficiency IGBT designed for power switching applications.  
- It is optimized for low conduction and switching losses, making it suitable for high-frequency applications.  
- The device is housed in a TO-247 package, providing robust thermal and electrical performance.  

### **Features:**  
- **Low VCE(sat):** Ensures reduced conduction losses.  
- **Fast Switching:** Improves efficiency in high-frequency circuits.  
- **High Current Capability:** Supports high-power applications.  
- **Temperature Stability:** Designed for reliable operation across a wide temperature range.  
- **Robust Construction:** TO-247 package ensures durability and efficient heat dissipation.  

This information is strictly based on the manufacturer's datasheet for the IRG4PSH71UD IGBT.

Application Scenarios & Design Considerations

1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package

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