HEXFET? Power MOSFET The IRFU9014PBF is a power MOSFET manufactured by International Rectifier (IR). Below are its key specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** International Rectifier (IR)
- **Part Number:** IRFU9014PBF
- **Type:** P-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** -60V
- **Continuous Drain Current (ID):** -12A (at TC = 25°C)
- **Pulsed Drain Current (IDM):** -48A
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 42W (at TC = 25°C)
- **On-Resistance (RDS(on)):** 0.27Ω (max) at VGS = -10V
- **Threshold Voltage (VGS(th)):** -2V to -4V
- **Input Capacitance (Ciss):** 450pF (typical)
- **Output Capacitance (Coss):** 110pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 10ns (typical)
- **Rise Time (tr):** 30ns (typical)
- **Turn-Off Delay Time (td(off)):** 35ns (typical)
- **Fall Time (tf):** 20ns (typical)
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-220AB (Through-Hole)
### **Description:**
The IRFU9014PBF is a P-Channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance, fast switching speeds, and robust thermal performance, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.
### **Features:**
- Low gate charge for improved switching efficiency
- High current handling capability
- Low RDS(on) for reduced conduction losses
- Fast switching characteristics
- Avalanche energy rated for ruggedness
- Lead-free and RoHS compliant
This information is strictly based on the manufacturer's datasheet and specifications.
