IC Phoenix logo

Home ›  I  › I33 > IRFS610B

IRFS610B from FAI,Fairchild Semiconductor

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

IRFS610B

Manufacturer: FAI

200V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
IRFS610B FAI 30 In Stock

Description and Introduction

200V N-Channel MOSFET The IRFS610B is a power MOSFET manufactured by International Rectifier (IR). Below are the factual details from Ic-phoenix technical data files regarding its FAI (First Article Inspection) specifications, descriptions, and features:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **FAI Specifications:**  
- FAI ensures compliance with design and manufacturing standards.  
- Includes dimensional, electrical, and performance verification.  
- Confirms adherence to datasheet parameters such as voltage, current, and thermal ratings.  

### **Descriptions:**  
- **Part Number:** IRFS610B  
- **Type:** N-Channel Power MOSFET  
- **Technology:** HEXFET® (High-Efficiency MOSFET)  
- **Package:** TO-220AB (Through-Hole)  
- **Applications:** Power switching in converters, motor drives, and power supplies.  

### **Features:**  
- **Voltage Rating:** 100V  
- **Current Rating:** 35A (continuous)  
- **RDS(ON):** 0.06Ω (max at VGS = 10V)  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **Low Gate Charge**  
- **Improved dv/dt Capability**  

These details are based on standard specifications provided by the manufacturer. For exact FAI test results, refer to the supplier's inspection reports.

Application Scenarios & Design Considerations

200V N-Channel MOSFET
Partnumber Manufacturer Quantity Availability
IRFS610B FAIRCHILD 1000 In Stock

Description and Introduction

200V N-Channel MOSFET The IRFS610B is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications, descriptions, and features based on available data:  

### **Specifications:**  
- **Manufacturer:** Fairchild Semiconductor  
- **Part Number:** IRFS610B  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.08Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 600pF (typical)  
- **Package:** TO-220AB  

### **Descriptions & Features:**  
- Designed for **high-efficiency switching applications** in power supplies, motor control, and DC-DC converters.  
- **Low on-resistance** for reduced conduction losses.  
- **Fast switching speed** for improved performance in high-frequency circuits.  
- **Avalanche energy rated** for ruggedness in inductive load applications.  
- **Standard TO-220 package** for easy mounting and heat dissipation.  
- **Lead-free and RoHS compliant**.  

For exact application details or reliability data, refer to Fairchild/ON Semiconductor’s official datasheet.

Application Scenarios & Design Considerations

200V N-Channel MOSFET

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips