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IRFS41N15DTRL from IR,International Rectifier

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IRFS41N15DTRL

Manufacturer: IR

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRFS41N15DTRL IR 1400 In Stock

Description and Introduction

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRFS41N15DTRL is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
International Rectifier (IR)  

### **Part Number:**  
IRFS41N15DTRL  

### **Description:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 150V  
- **Continuous Drain Current (ID):** 41A  
- **Pulsed Drain Current (IDM):** 160A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.041Ω (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Input Capacitance (Ciss):** 1800pF (typical)  
- **Output Capacitance (Coss):** 400pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 45ns (typical)  

### **Package:**  
- **Type:** D2PAK (TO-263)  
- **Mounting:** Surface Mount  
- **Termination:** SMD/SMT  

### **Features:**  
- Low on-resistance for high efficiency  
- Fast switching performance  
- High current handling capability  
- Robust and reliable design for power applications  
- Suitable for DC-DC converters, motor control, and power switching applications  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Alternative Part Number

  • STP60NF06 --: N-channel 60V MOSFET in TO-220 with low RDS(on), suitable replacement for 150V-class switching applications when voltage margin allows; widely available and cost-effective.
  • FDP047AN08A0 --: N-channel power MOSFET with low on-resistance and fast switching, similar TO-220 package and current rating, good drop-in candidate for switching power designs.
  • IPP60R190P6 --: CoolMOS N-channel MOSFET in TO-220 with high voltage rating and low RDS(on), suitable for high-efficiency switching applications as an alternative to the IR device.

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